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BTS4300SGA smart high-side power switch data sheet, rev. 1.0, march 2008 automotive power
datasheet 2 1.0, 2007-19-12 bts 4300sga 1overview 3 2block diagram 5 3 pin configuration 6 3.1 pin assignment 6 3.2 pin definitions and functions 6 3.3 voltage and current definition 7 4 general product characteristics 8 4.1 absolute maximum ratings 8 4.2 functional range 9 4.3 thermal resistance 9 5 power stage 10 5.1 output on-state resistance 10 5.2 turn on / off characteristics 10 5.3 inductive output clamp 11 5.4 electrical characteristics power stage 12 6 protection mechanisms 13 6.1 undervoltage protection 13 6.2 overvoltage protection 13 6.3 reverse polarity protection 14 6.4 overload protection 14 6.5 electrical characteristics protection functions 16 7 diagnostic mechanism 17 7.1 st pin 17 7.2 st signal in case of failures 17 7.2.1 diagnostic in open load, channel off 17 7.2.2 st signal in case of over temperature 19 7.3 electrical characteristics diagnostic functions 20 8 input pin 21 8.1 input circuitry 21 8.2 electrical characteristics 21 9 application information 22 9.1 further application information 22 10 package outlines 23 11 revision history 24
pg-dso-8-24 type package marking BTS4300SGA pg-dso-8-24 4300sga data sheet 3 rev. 1.0, 2008-03-18 smart high-side power switch BTS4300SGA 1 overview basic features ? fit for 12v application ? one channel device ? very low stand-by current ? cmos compatible inputs ? electrostatic discharge protection (esd) ? optimized electromagnetic compatibility ? logic ground independent from load ground ? very low leakage current from out to the load in off state ? green product (rohs compliant) ?aec qualified description the BTS4300SGA is a single channel smart high-side power switch. it is embedded in a pg-dso-8-24 package, providing protective functions and diagnostics. the power transistor is built by a n-channel power mosfet with charge pump. the device is monolithically integrated in smart technology. it is specially designed to drive relay or led in the harsh automotive environment. diagnostic feature ? open drain diagnostic output ? open load detection in off state table 1 electrical parameters (short form) parameter symbol value operating voltage range v sop 5v .... 34v over voltage protection v s (az) 41v maximum on state resistance at t j = 150c r ds(on) 600m ? nominal load current i l (nom) 0.4a minimum current limitation i l_scr 0.4a standby current for the whole device with load i s(off) 26a maximum reverse battery voltage - v s(rev) 32v
BTS4300SGA overview data sheet 4 rev. 1.0, 2008-03-18 protection functions ? short circuit protection ? overload protection ? current limitation ? thermal shutdown with restart ? overvoltage protection (including load dump) ? loss of ground and loss of battery protection ? electrostatic discharge protection (esd) application ? all types of relays, resistive and capacitive loads
data sheet 5 rev. 1.0, 2008-03-18 BTS4300SGA block diagram 2 block diagram figure 1 block diagram for the BTS4300SGA block diagram.emf v s out in t driver logic gate control & charge pump open load detection over temperature clamp for inductive load over current switch off voltage sensor gnd esd protection st internal power supply
BTS4300SGA pin configuration data sheet 6 rev. 1.0, 2008-03-18 3 pin configuration 3.1 pin assignment figure 2 pin configuration 3.2 pin definitions and functions pin symbol function 1gnd ground ; ground connection 2in input channel; input signal. activate the channel in case of logic high level 3out output; protected high side power output channel 4 st diagnostic feedback; of channel. open drain. 5, 6, 7, 8 v s battery voltage; design the wiring for the simultaneous max. short circuit current and also for low thermal resistance v s v s v s gnd in out st v s 1 3 2 8 7 6 4 5
data sheet 7 rev. 1.0, 2008-03-18 BTS4300SGA pin configuration 3.3 voltage and current definition figure 3 shows all terms used in this data sheet, with associated convention for positive values. figure 3 voltage and current definition v s in st gnd out i in i st v s v in v st i s i gnd v ds v out i l voltage and current convention single avec diag.vsd r gnd
BTS4300SGA general product characteristics data sheet 8 rev. 1.0, 2008-03-18 4 general product characteristics 4.1 absolute maximum ratings note: stresses above the ones listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. absolute maximum ratings 1) t j = 25 c; (unless otherwise specified) 1) not subject to production test, specified by design pos. parameter symbol limit values unit conditions min. max. voltages 4.1.1 supply voltage v s ?40v? 4.1.2 reverse polarity voltage - v s(rev) 032v 4.1.3 supply voltage for short circuit protection v bat(sc) 028v r ecu = 20m ?, r cable =16m ? /m, l cable =1h/m, l = 0 or 5m 2) see chapter 6 2) in accordance to aec q100-012 and aec q101-006 input pins 4.1.4 voltage at input pins v in -10 16 v ? 4.1.5 current through input pins i in -5 5 ma ? power stage 4.1.6 load current | i l |? i l(lim) a? 4.1.7 power dissipation (dc), p tot ?0.8w t a =85c, t j <150c 4.1.8 inductive load switch off energy dissipation, single pulse e as ?800mj t j =150c, v s =13.5v, i l = 0.3a temperatures 4.1.9 junction temperature t j -40 150 c? 4.1.10 storage temperature t stg -55 150 c? esd susceptibility 4.1.11 esd resistivity in pin v esd -1 1 kv hbm 3) 3) esd susceptibility hbm according to eia/jesd 22-a 114b 4.1.12 esd resistivity all other pins v esd -5 5 kv hbm 3)
data sheet 9 rev. 1.0, 2008-03-18 BTS4300SGA general product characteristics 4.2 functional range note: within the functional range the ic operates as described in the circuit description. the electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 thermal resistance pos. parameter symbol limit values unit conditions min. max. 4.2.1 operating voltage v sop 534v v in = 4.5v, r l = 47 ?, v ds < 0.5v 4.2.2 undervoltage shutdown v suv ?5v? 4.2.3 undervoltage restart of charge pump v s(u cp) ?5.5v? 4.2.4 operating current i gnd 1.3 ma v in = 5v 4.2.5 standby current i s(off) ? 26 a t j = 150c, v in = 0v pos. parameter symbol limit values unit conditions min. typ. max. 4.3.1 junction to soldering point r thjc ??15k/w? 1) 1) not subject to production test, specified by design 4.3.2 junction to ambient: channel active r thja ? 83 ? k/w with 6cm2 cooling area 1)
BTS4300SGA power stage data sheet 10 rev. 1.0, 2008-03-18 5 power stage the power stage is built by an n-channel vertical power mosfet (dmos) with charge pump. 5.1 output on-state resistance the on-state resistance r ds(on) depends on the supply voltage as well as the junction temperature t j . figure 4 shows the dependencies for the typical on-state resistance. the behavior in reverse polarity is described in chapter 6.3 . figure 4 typical on-state resistance a high signal (see chapter 8 ) at the input pin causes the power dmos to switch on with a dedicated slope, which is optimized in terms of emc emission. 5.2 turn on / off characteristics figure 5 shows the typical timing when switching a resistive load. figure 5 turn on/off (resistive) timing 0 100 200 300 400 500 600 700 800 900 1000 01234 56789101112131415161718 battery voltage (v) rdson (m ? ) rdson.vsd 0 100 200 300 400 500 600 -40 -2 0 0 20 40 6 0 80 1 00 12 0 140 junction temperature (c) rdson (m ) in t v out t on t off 90% v s 10% v s v in_h_min v in_l_max t switching times.vsd 30% v s 70% v s dv/dt on dv/dt off
data sheet 11 rev. 1.0, 2008-03-18 BTS4300SGA power stage 5.3 inductive output clamp when switching off inductive loads with high side switches, the voltage v out drops below ground potential, because the inductance intends to continue driving the current. to prevent the destruction of the device due to high voltages, there is a voltage clamp mechanism implemented that keeps the negative output voltage at a certain level ( v s - v ds(az) ). please refers to figure 6 and figure 7 for details. nevertheless, the maximum allowed load inductance is limited. figure 6 output clamp figure 7 switching in inductance timing maximum load inductance during demagnetization of inductive loads, energy has to be dissipated in the BTS4300SGA. this energy can be calculated with following equation: v bat v out i l l, r l v s out v ds logic in v in output clamp.vsd gnd in v out i l v s v s- v ds(az) t t t switching an inductance.vs d t peak ev d s az () l r l ------- - v s v ds az () ? r l --------------------------------------- - r l i l v s v ds az () ? --------------------------------------- - ?? ?? ln i l ++ =
BTS4300SGA power stage data sheet 12 rev. 1.0, 2008-03-18 following equation simplifies under the assumption of r l = 0 ? . the energy, which is converted into heat, is limited by the thermal design of the component. 5.4 electrical characteristics power stage electrical characteristics: power stage v s = 13.5v, t j = -40 c to +150 c,(unless otherwise specified). typical values are given at t j = 25c pos. parameter symbol limit values unit conditions min. typ. max. 5.4.1 on-state resistance per channel r ds(on) ?300?m ? t j = 25c, 1) i l = 0.3a, v bb = 9...40v v in = 5v, see figure 4 1) not subject to production test, specified by design ?480600 t j =150c 5.4.2 nominal load current i l(nom) 0.4??a t a =85c 1) , t j <150c 5.4.3 drain to source clamping voltage v ds(az) = v s - v out v ds(az) 41 47 ? v i ds = 4ma 2) 2) voltage is measured by forcing i ds. 5.4.4 output leakage current i l(off) ??12a v in =0v, v out = 0v 5.4.5 slew rate on 10% to 30% v out d v/dt on ?- ?- 2 v/s r l =47 ?, v s =13.5v, see figure 5 5.4.6 slew rate off 70% to 40% v out -d v/dt off ??2v/s 5.4.7 turn-on time to 90% v out includes propagation delay t on ??140s 5.4.8 turn-off time to 10% v out includes propagation delay t off ??170s e 1 2 -- - li 2 1 v s v s v ds az ) () ? ------------------------------------------ - ? ?? ?? =
data sheet 13 rev. 1.0, 2008-03-18 BTS4300SGA protection mechanisms 6 protection mechanisms the device provides embedded protective functions. integrated protection functions are designed to prevent the destruction of the ic from fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are designed for neither continuous nor repetitive operation. 6.1 undervoltage protection below v sop_min , the under voltage mechanism is met. if the supply voltage is below the under voltage mechanism, the device is off (turns off). as soon as the supply voltage is above the under voltage mechanism, then the device can be switched on and the protection functions are operational. 6.2 overvoltage protection there is a clamp mechanism for over voltage protection. to guarantee this mechanism operates properly in the application, the current in the zener diode z daz has to be limited by a ground resistor. figure 8 shows a typical application to withstand overvoltage issues. in case of supply greater than v s(az) , the power transistor switches on and the voltage across logic section is clamped. as a result, the internal ground potential rises to v s - v s(az) . due to the esd zener diodes, the potential at pin in rises almost to that potential, depending on the impedance of the connected circuitry. integrated resistors are provided at the in pin to protect the input circuitry from excessive current flow during this condition. figure 8 over voltage protection with external components in the case the supply voltage is in between of v s(sc) max and v ds(az) , the output transistor is still operational and follow the input. if the channel is in on state, parameters are no longer warranted and lifetime is reduced compared to normal mode. this specially impacts the short circuit robustness, as well as the maximum energy e as the device can handle. in st r in r st zd esd gnd out v s v bat r gnd zd az logic overvoltage protection single with diag.vsd
BTS4300SGA protection mechanisms data sheet 14 rev. 1.0, 2008-03-18 6.3 reverse polarity protection in case of reverse polarity, the intrinsic body diode causes power dissipation. the current in this intrinsic body diode is limited by the load itself. additionally, the current into the ground path and the logical pins has to be limited to the maximum current described in chapter 4.1 , sometimes with an external resistor. figure 9 shows a typical application. the r gnd resistor is used to limit the current in the zener protection of the device. resistors r in and r st is used to limit the current in the logic of the device and in the esd protection stage. the recommended value for r gnd is 150 ? , for r st 0/1 = 15k ? . in case the over voltage is not considered in the application, r gnd can be replaced by a shottky diode. figure 9 reverse polarity protection with external components 6.4 overload protection in case of overload, or short circuit to ground, the BTS4300SGA offers two protections mechanisms. current limitation at first step, the instantaneous power in the switch is maintained to a safe level by limiting the current to the maximum current allowed in the switch i l(lim) . during this time, the dmos temperature is increasing, which affects the current flowing in the dmos. thermal protection at thermal shutdown, the device turns off and cools down. a restart mechanism is used, after cooling down, the device restarts and limits the current to i l(scr) . figure 10 shows the behavior of the current limitation as a function of time. micro controller (e.g. xc22xx) gnd out in v s v bat r st st r in r gnd z dbody zd esd reverse polarity single with diag.vs d -v ds(rev) i l(nom) r stpu vccc
data sheet 15 rev. 1.0, 2008-03-18 BTS4300SGA protection mechanisms figure 10 current limitation function of the time t i l i l(lim) i l(scr) cur r ent lim itation with diag full . vsd t in st t t dst(+)
BTS4300SGA protection mechanisms data sheet 16 rev. 1.0, 2008-03-18 6.5 electrical characteristics protection functions electrical characteristics: protection v s = 13.5v, t j = -40 c to +150 c. typical values are given at t j = 25c pos. parameter symbol limit values unit conditions min. typ. max. reverse polarity 6.5.1 drain source diode voltage during reverse polarity - v ds(rev) ? 600 ? mv t j = 150c overvoltage 6.5.2 over voltage protection v s(az) 41 ? ? v i s = 4ma overload condition 6.5.3 load current limitation i l(lim) ? ? 0.4 ? 1.2 ? 2 ? ? a t j = -40c, t j = 25c, t j = 150c, v s = 20v 6.5.4 repetitive short circuit current limitation i l(scr) ?1?a 1) 6.5.5 thermal shutdown temperature t jsc 150 ? ? c ? 1) 6.5.6 thermal shutdown hysteresis ? t jt ?10?k? 1) 1) not subject to production test, but specified by design
data sheet 17 rev. 1.0, 2008-03-18 BTS4300SGA diagnostic mechanism 7 diagnostic mechanism for diagnosis purpose, the BTS4300SGA provides a status pin. 7.1 st pin BTS4300SGA status pin is an open drain, active low circuit. figure 11 shows the equivalent circuitry. as long as no ?hard? failure mode occurs (short circuit to gnd / over temperature or open load in off), the signal is permanently high, and due to a required external pull-up to the logic voltage will exhibit a logic high in the application. a suggested value for the r pu st is 15k ?. . figure 11 status output circuitry 7.2 st signal in case of failures table 3 gives a quick reference for the logical state of the st pin during device operation. 7.2.1 diagnostic in open load, channel off for open load diagnosis in off-state, an external output pull-up resistor ( r ol ) is recommended. for calculation of the pull-up resistor value, the leakage currents and the open load threshold voltage v ol(off) has to be taken into account. figure 12 gives a sketch of the situation and figure 13 shows the typical timing diagram. i leakage defines the leakage current in the complete system, including i l(off) (see chapter 5.4 ) and external leakages e.g due to humidity, corrosion, etc... in the application. table 3 st pin truth table device operation in out st normal operation l l h hhh open load channel l h l hhh over temp channel l l h hll short circuit to gnd l l h h l 1) 1) v out < 2v typ. l st pin f ull diag.vsd gnd st r st zd esd r pu st v ccc channel 0 diagnostic logic
BTS4300SGA diagnostic mechanism data sheet 18 rev. 1.0, 2008-03-18 to reduce the stand-by current of the system, an open load resistor switch s ol is recommended. if the channel is off, the output is no longer pulled down by the load and v out voltage rises to nearly v s . this is recognized by the device as open load. the voltage threshold is given by v ol(off) . in that case, the st signal is switched to a logical low v stl . figure 12 open load detection in off electrical equivalent circuit figure 13 st in open load condition out v s r leakage r ol s ol v bat v ol(off) i leakage i l(ol) ol comp. open load i n off .vsd gnd r gnd in v out st i l diagnostic in open load full diag.vs t t t t v st(high) v ol(off) v st(low)
data sheet 19 rev. 1.0, 2008-03-18 BTS4300SGA diagnostic mechanism 7.2.2 st signal in case of over temperature in case of over temperature, the junction temperature reaches the thermal shutdown temperature t jsc . in that case, the st signal is stable and remains to toggling between v st(l) and v st(h) . figure 14 gives a sketch of the situation. figure 14 sense signal in overtemperature condition . in v out st t j diagnostic in overload full toggling.vs t t t t t jsc ? t jsc
BTS4300SGA diagnostic mechanism data sheet 20 rev. 1.0, 2008-03-18 7.3 electrical characteristics diagnostic functions electrical characteristics: diagnostics v s = 13.5v, t j = -40 c to +150 c, (unless otherwise specified) typical values are given at v s = 13.5v, t j = 25c pos. parameter symbol limit values unit conditions min. typ. max. load condition threshold for diagnostic 7.3.1 open load detection voltage v ol(off) ?3.0?v v in = 0v 7.3.1 open load detection current i l(ol) ?5?aincluded in the standby current i s(off) st pin 7.3.2 status output (open drain) high level; zener limit voltage v st (high) 5.4 6.1 ? v i st = +1,6ma 1) , zener limit voltage 7.3.3 status output (open drain) low level v st (low) ??0.6v i st =+1,6ma 1) 1) if ground resistor r gnd is used, the voltage drop across this resistor has to be added diagnostic timing 7.3.4 status invalid after positive input slope t dst(+) ?300600s? 2) 2) not subject to production test, specified by design 7.3.5 short circuit detection voltage v out (sc) ?2.8?v?
data sheet 21 rev. 1.0, 2008-03-18 BTS4300SGA input pin 8 input pin 8.1 input circuitry the input circuitry is cmos compatible. the concept of the input pin is to react to voltage transition and not to voltage threshold. with the schmidt trigger, it is impossible to have the device in an un-defined state, if the voltage on the input pin is slowly increasing or decreasing. the output is either off or on but cannot be in an linear or undefined state. the input circuitry is compatible with pwm applications. figure 15 shows the electrical equivalent input circuitry. the pull down current source ensures the channel is off with a floating input. figure 15 input pin circuitry 8.2 electrical characteristics electrical characteristics: diagnostics v s = 13.5v, t j = -40 c to +150 c, typical values are given at v s = 13.5v, t j = 25c pos. parameter symbol limit values unit conditions min. typ. max. input pins characteristics 8.2.1 low level input voltage v in(l) ??0.8v? 1) 1) if ground resistor r gnd is used, the voltage drop across this resistor has to be added 8.2.2 high level input voltage v in(h) 2.2??v? 1) 8.2.3 input voltage hysteresis v in(hys) ?0.3?v? 2) 2) not subject to production test, specified by design 8.2.4 low level input current i in(l) 1?30a v in = 0.7v 8.2.5 high level input current i in(h) 1?30a v in = 5v 8.2.6 input resistance r i 1.5 3.5 5 k ? see figure 15 in esd to driver?s logic input circuitry.vsd r i i i
BTS4300SGA application information data sheet 22 rev. 1.0, 2008-03-18 9 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. figure 16 application diagram with BTS4300SGA note: this is a very simplified example of an application circuit. the function must be verified in the real application. 9.1 further application information ? for further information you may visit http://www.infineon.com/ out in gnd vdd microcontroller (e.g. xc22xx) r in r st in st is gnd out v s r gnd v bat r ol v bat_sw v dd r pust v dd application example single avec diag.vsd
data sheet 23 rev. 1.0, 2008-03-18 BTS4300SGA package outlines 10 package outlines figure 17 pg-dso-8-24 (plastic dual small outline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). does not include plastic or metal protrusion of 0.15 max. per side -0.05 -0.2 +0.1 5 0.41 index marking (chamfer) x8 1 1) 4 8 1.27 5 a 0.1 0.2 m a (1.5) 0.1 min. 1.75 max. c c 6 ?.2 0.64 0.33 4 -0.2 -0.01 0.2 +0.05 x 45? ?.08 1) ?.25 max. 8? 1) index marking
BTS4300SGA revision history data sheet 24 rev. 1.0, 2008-03-18 11 revision history version date changes 1.0 2008-03-18 creation of the data sheet
edition 2008-03-18 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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